充电桩
Isolated Gate Driver IC
| Product | Character | IO+/-(typ.) | VCC1 | VCC2 | Ton/off(typ.) |
| PN7901 | Isolated Single Channel Gate Driver | 5/5A | 3.1V-20V | 10V-20V | 120/120ns |
| PN7901M | Single-channel Isolated Gate Driver w/Miller clamp | 5/5A | 3.1-24V | 13-24V | 150/150ns |
| PN7902M | Single-channel Isolated Gate Driver w/Miller clamp | 5/5A | 3.1V-20V | 13V-20V | 115/115ns |
| PN7902Q | Isolated Single Channel Gate Driver | 5/5A | 3.1V-20V | 13V-20V | 115/115ns |
| PN7921 | Dual-channel Isolated Gate Driver | 4/8A | 3-5.5V | 9-20V | 39/39ns |
| PN7922 | Isolated Dual-Channel Gate Driver | 4/8A | 3-5.5V | 9-20V | 39/39ns |
| PN7924W | Dual-channel Isolated Gate Driver for GAN | 2/4A | - | - | - |
| PN6871 | Isolated Single Channel Gate Driver with PSR VCC | 5/5A | 3.1V-20V | 10V-20V | 120/120ns |
| PN7934 | Quad-Channel Digital Isolator Gate Driver | 20/20mA | 2.5~5.5V | 2.5~5.5V | 10/10ns |
IGBT
| Product | Character | V(BR)ds | Idnom | Vcesat/typ. | Package |
| ID20G65 | Low Vcesat,Low VF, easy of use | 650V | 20A | 1.6 | TO 247 |
| ID30G65T | Low Vcesat,low switching loss,easy of use | 650V | 30A | 1.5 | TO 247 |
| ID40G65T | Low Vcesat,low switching loss,easy of use | 650V | 40A | 1.5 | TO 247 |
| ID50G65T | Low Vcesat,low switching loss,easy of use | 650V | 50A | 1.5 | TO 247 |
| ID75G65 | Low Vcesat,Low VF, easy of use | 650V | 75A | 1.6 | TO 247 |
SJ MOSFET
| Product | Character | V(BR)ds | Idnom | Rdson @10V typ | Rdson @10V MAX |
| ID60R022F | SuperJunction MOS Field Effect Transistor | 650V | 95A | 19mQ | 22mQ |
| ID65R030F | SuperJunction MOS Field Effect Transistor | 650V | 78A | 25mQ | 28mQ |
| ID65R070F | SuperJunction MOS Field Effect Transistor | 650V | 37A | 60mQ | 68mQ |
| ID3N150 | N-Channel HV MOS Field Effect Transistor | 1500V | 3A | 5.9Ω | 6.5Ω |
| ID4N150 | N-Channel HV MOS Field Effect Transistor | 1500V | 4A | 5.0Ω | 5.8Ω |
